Inductive Coupled Plasma Etch Intern
Seagate TechnologyAbout the role
About our group:
The intern will have an exciting opportunity to develop ICP etch wafer process for recording head fabrication in a wafer process development team at our R&D site in Bloomington, MN.
About the role - you will:
- Participate in ICP (inductive coupled plasma) etch process development in a development environment, under the supervision of one or more engineers. Projects may include developing ICP processes, collecting/analyzing data and presenting the results to the engineering community.
- Acquire hands-on key skills to ICP process development that are applicable to both hard drive and semiconductor industries.
- Work in a team environment with exposure to senior engineers. You will have the opportunity to share your knowledge and learn from them.
About you:
- Good written and verbal communication abilities.
- Highly productive in both team and independent work environments.
- Must be detail-oriented
Your experience includes:
- Cleanroom experience a plus but not must
- BS or MS student pursuing a degree in Materials Science, Chemical Engineering, Chemistry, Electrical Engineering, Physics or related science and engineering disciplines.
Location:
Our Normandale campus spans two suburbs, Edina and Bloomington, and serves as the Recording Head development and manufacturing arm of Seagate. Located in the heart of a bustling community, Seagate offers an on-site café, or if you prefer, you can drive to one of many restaurants just minutes away. Need to grab a gift over lunch time? Shopping is abundant in the area. If working out is your thing, the on-site fully equipped fitness center hosts wellness programs, outdoor activities, tournaments and group workouts. Looking for something more laid back? Reset in one of our meditation rooms, or simply take a walk around our indoor walking path. On-site cultural festivals, celebrations and community volunteer opportunities also abound. #internship
Location: Normandale, United States
Travel: None
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