Job Details:

Job Description: 

Intel Silicon Photonics Product Division (SPPD) is at the forefront of silicon photonics integration and is at the heart of Intel's transformation from a PC company to a company that powers the cloud and billions of smart, connected computing-devices. Since announcing the world's first hybrid silicon laser nearly a decade ago, our team continues to lead the industry with cutting-edge technology and efficient, scalable high-volume manufacturing. Our dedication to advanced development ensures that Intel Silicon Photonics continues to drive future data center bandwidth growth with smaller form factors, co-packaging and higher speeds from 400G today to 1.6T+ and beyond tomorrow. We are looking for great talent to accelerate this journey so if you are interested in joining our leading organization then we want to hear from you.

Intel's SPPD is currently seeking a Senior High-speed Photonics Design Engineer to own and drive design and development of advanced high-speed components such as modulator and photodetector for our next generation products. The successful candidate will be responsible for silicon photonic components and photonic integrated chip (PIC) design, simulation, and characterization. You will work closely with other photonic component design engineers for device design, simulations, and chip floor planning and tape-out.

The ideal candidate should exhibit behavioral traits that indicate:

• Strong verbal and written communication skills
• Excellent problem-solving skills

Key responsibilities include but are not limited to:

• Defining high-speed components architecture based on product requirement document and/or customer application specification
• Defining and documenting modulator, photodetector and Avalanche photodiode specifications
• Performing device design, electrical and optical simulation, chip layout and tape-out, characterization and performance debug
• Working with engineering and manufacturing teams to define fabrication process and test requirements
• Analyzing wafer-level test and die-level test data
• Driving subsystem build and test for device performance with electronic component integration
• Owning component reliability and qualification as well as device improvement and maturation from pathfinding through product release

In this position you will gain invaluable experience which will allow growth and expanded opportunities within this business group as well as future possible opportunities with other business groups within Intel.

Qualifications:

You must possess the below minimum qualifications to be initially considered for this position. Preferred qualifications are in addition to the minimum requirements and are considered a plus factor in identifying top candidates.

Education Requirement:

• PhD in Electrical Engineering, Physics, or a similar discipline with 2+ years of experience in a related field and 2 years of relevant industry experience

Minimum Required Qualifications:

• 2+ years of experience in designing, simulating, and testing high-speed components such as modulator, photodetector and Avalanche photodiode as well as taping out photonic integrated chip.
• 2+ years of experience in using optical simulation tools such as Lumerical FDTD /Mode solutions, Beamprop, Fullwave, Fimmwave, Fimmprop, etc.
• 2+ years of experience in using process and device simulation tools such as Sentaurus and Silvaco.
• 2+ years of experience in using high-speed simulation tools such as HFSS and ADS.
• 2+ years of experience in using layout tools such as Candence and KLayout and numerical simulation tools such as Matlab

Additional Preferred Qualifications:

• Experience in design and development of Si modulator, III-V/Si modulator, Ge on silicon-on-insulator waveguide-based photodetector and Avalanche photodiode up to 128GBaud data rate.
• Experience in RF transmission line theory and circuit modeling for high-speed devices
• Experience in Ge growth/process technology and its impact on Ge photodetector performance
• Experience in high-speed receiver including knowledge in high-speed driver, trans-impedance amplifier and RF packaging scheme
• Experience in semiconductor device physics and fiber optical communication theory.
• Experience with high-speed signal integrity on chip and board and equalization effect on fast data transmission.
• Experience and knowledge in GeSn and III-V hybrid photodetector is a plus

          

Job Type:

Experienced Hire

Shift:

Shift 1 (United States of America)

Primary Location: 

US, California, Santa Clara